Researchers from MIT have developed a low-cost, scalable fabrication process for integrating high-performance GaN transistors onto standard silicon CMOS chips. The process involves building tiny transistors on the GaN chip's surface, cutting out individual transistors, and bonding them onto a silicon chip. This method offers significant performance boosts and reduces system temperature. The process was used to fabricate a power amplifier for mobile phones, improving signal strength and efficiencies, enhancing connectivity, and extending battery life.